A new abrasive-free, chemical-mechanical-polishing technique for aluminum metallization of ULSI devices
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 976-978
- https://doi.org/10.1109/iedm.1992.307520
Abstract
A new polishing technique for the aluminum (Al) metallization is developed, referred to as an Abrasive-Free, Chemical-Mechanical-Polishing (AFP) technique, in which aqueous amine and hydrogen-peroxide (H/sub 2/O/sub 2/) solution is used as a polishing liquid. Scratch-free Al plugs embedded in SiO/sub 2/ films are obtained by the AFP with the high polishing selectivity of the Al to SiO/sub 2/.Keywords
This publication has 0 references indexed in Scilit: