GaAs MESFETs with a buried p -layer for large-scale integration

19 January 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (2) , 98-100
https://doi.org/10.1049/el:19840069

Abstract

A new GaAs MESFET structure with a buried p-layer that produces a uniform threshold voltage is proposed and realised using a Be ion implantation technique. These new FETs improve the uniformity of the threshold voltage to 5% from the previous 10% in HB Cr-doped GaAs crystal.

Keywords

LARGE-SCALE INTEGRATION
UNIFORM THRESHOLD VOLTAGE
IC TECHNOLOGY
LSI
GAAS MESFET
III-V SEMICONDUCTOR
SEMICONDUCTOR DOPING
BE ION IMPLANTATION
BURIED P-LAYER

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