Hall effect study of p-type high resistivity layers on n-type silicon substrates
- 1 February 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (2) , 107-113
- https://doi.org/10.1016/0038-1101(76)90086-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On the effect of gate oxide thickness upon the hall mobility and other magneto-electrical characteristics in most structuresSolid-State Electronics, 1974
- Micro-Electronic Magnetic TransducersMeasurement and Control, 1973
- Magnetic sensitivity of a MAGFET of uniform channel current densitySolid-State Electronics, 1971
- A Metal-Oxide-Semiconductor (MOS) Hall elementSolid-State Electronics, 1966
- Der Geometrieeinfluß auf den Hall-Effekt bei rechteckigen HalbleiterplattenZeitschrift für Naturforschung A, 1958
- Improved Method for Measuring Hall CoefficientsReview of Scientific Instruments, 1948