Electromigration in aluminium thin films under pulsed-current conditions
- 1 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Proceedings of the Institution of Electrical Engineers
- Vol. 123 (11) , 1209-1212
- https://doi.org/10.1049/piee.1976.0241
Abstract
Despite extensive investigation of electromigration in aluminium interconnections, the available data are sufficient to apply to tracks carrying pulsed currents in operational conditions. A theory of electromigration that considers the growth of microscopic voids in a track has been developed for the case of electromigration under pulsed-current conditions. The resulting model has been confirmed by a limited number of experimental results. Failure of tracks stressed with a.c. was observed to be due to mechanisms other than electromigration.Keywords
This publication has 2 references indexed in Scilit:
- Failure Model for ElectromigrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- A Statistical Model for Electromigration Induced Failure in Thin Film Conductors8th Reliability Physics Symposium, 1972