Mg-doped graded base GaAs/AlGaAs heterojuimction bipolar transistors grown by metalorganic vapour phase epitaxy

4 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (1) , 58-59
https://doi.org/10.1049/el:19900038

Abstract

GaAs/AlGaAs heterojunction bipolar transistors with Mg-doped graded base have been realised by metalorganic vapour phase epitaxy. Current gains above 70 and transit frequencies of 20 GHz are achieved.

Keywords

MOVPE
SEMICONDUCTORS
METALORGANIC VAPOUR PHASE EPITAXY
HETEROJUNCTION BIPOLAR TRANSISTORS
GAAS-ALGAAS
CURRENT GAIN
HBT
20 GHZ
ALXGA1-XAS:MG GRADED BASE
TRANSIT FREQUENCIES

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