Phonons in self-assembled (In,Ga,Al)Sb quantum dots
- 12 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (7) , 958-960
- https://doi.org/10.1063/1.116111
Abstract
Quantum dots of InSb, GaSb, and AlSb were grown on GaAs substrates by molecular beam epitaxy and characterized by atomic force microscopy and Raman spectroscopy. There is a clear correlation between the observation of quantum dots by atomic force microscopy and a phonon mode at an energy a few wavenumbers below the longitudinal optic phonon energy for thick (In,Ga,Al)Sb layers. In the case of nominally AlSb quantum dots, a two-mode behavior is observed and attributed to the segregation of Ga into the AlSb during growth.Keywords
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