Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers
- 9 December 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (25) , 2197-2199
- https://doi.org/10.1049/el:19931476
Abstract
A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/ GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10μm or less in diameter) perform as well as the best lasers reported in the literature.Keywords
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