Photoemission and theoretical studies of GaAs(111) and (1¯ 1¯ 1¯) surfaces: Vacancy models

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Abstract
Experimental and theoretical results for the Ga- and As-terminated GaAs(111) 2×2 reconstructed surfaces are presented. For the Ga-terminated (111) surface, tight-binding calculations of total density of electronic states for the vacancy model are in good agreement with results from angle-integrated photoemission measurements. Comparison of experiment and theory also demonstrates that the vacancy model is not suitable for the As-terminated (1¯ 1¯ 1¯) surface. This is in agreement with the prediction that vacancy formation is energetically unfavorable at this surface.