Ultrashort lifetime photocarriers in Ge thin films
- 10 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (24) , 3419-3421
- https://doi.org/10.1063/1.115779
Abstract
An ultrashort lifetime of photocarriers as short as 600 fs has been obtained in ion‐implanted Ge thin films grown on sapphire substrates. The photocarrier mobility determined by photoconductivity measurements is found to be reasonably high (∼100 cm2/V s). We have observed terahertz (THz) radiation from a photoconductive dipole antenna geometry.Keywords
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