Structure–composition variation in rf-sputtered films of Ge caused by process parameter changes

Abstract
It has been shown that noncrystalline Ge-sputtered films prepared under a range of conditions display a wide variation in structure, composition, and film properties depending on the sputtering process parameters. Data are presented in which optical absorption edge, stress, density, argon and oxygen contents, and other film properties can be varied continuously as a function of preparation parameters. The range of changes which can be brought about in these properties is enormous: changes of 20% in density, 500% in Ar content, and positive to negative in macroscopic stress are achieved within ’’normal’’ operating conditions. The data demonstrate unequivocally that the term ’’sputtered film’’ can refer to only a specific sample, not a reproducible material.