Investigation of chemical wet-etch surface modification of Ga0.5In0.5P using photoluminescence , x-ray photoelectron spectroscopy, capacitance measurements, and photocurrent-voltage curves
- 1 January 1995
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 99 (2) , 744-749
- https://doi.org/10.1021/j100002a043
Abstract
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