Critical thickness of GaN thin films on sapphire (0001)
- 14 October 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (16) , 2358-2360
- https://doi.org/10.1063/1.117524
Abstract
Synchrotron x‐ray diffraction was employed to measure the lattice constants a and c of GaN films grown with an AlN buffer layer on sapphire (0001) over a thickness range of 50 Å to 1 μm. We used multiple reflections and a least‐squares fit method for high reliability. As the thickness increased, the lattice constant a increased from 3.133 Å to 3.196 Å and c decreased from 5.226 Å to 5.183 Å. The expected trend was fitted to an equilibrium theory, allowing the critical thickness of GaN on AlN to be estimated at 29 Å ± 4 Å in good agreement with a theoretical prediction.Keywords
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