Magnetic memory elements with biaxial anisotropy
- 1 September 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Communication and Electronics
- Vol. 83 (74) , 544-548
- https://doi.org/10.1109/tcome.1964.6539505
Abstract
Crystallographically oriented, thin magnetic films are shown, from theory, to possess switching characteristics ideally suited for use in a noncoincident-current word-organized memory. These switching characteristics are derived from the theoretical critical curves for rotational single-domain switching for materials with biaxial or mixed biaxial and uniaxial anisotropy. The effect of domain wall motion and incomplete switching are discussed, and some preliminary experimental results are presented.Keywords
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