Exposure Rate Measurements of X- and Gamma-rays With Silicon Radiation Detectors

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Abstract
The steady-state d.c. current and voltage signals produced by X- or gamma-rays in silicon radiation detectors used either as photovoltaic cells or photodiodes are dependent on such circuit parameters as load resistance and bias voltage used in the respective exposure rate measurement. Non-linear exposure rate dependence of radiation-produced signals may result from choosing unsuitable circuit parameters and no singular value of sensitivity or signal per unit exposure rate can be ascribed to an individual detector without specifying the circuit parameters used. Measurements are reported with silicon radiation detectors, especially of the diffused p-n junction type, illustrating these performance features, and a measuring method is suggested which makes it possible to measure with high precision the generated photocurrent at zero voltage applied at the detector which is independent of circuit parameters and proportional to exposure rate over a wide range. Measurements using this method are reported of exposure rates ranging up to 105 R/hr of 30 kV X-rays of 0.09 mm A1 HVL, and from approximately 1 to 30 R/hr of 60Co gamma-rays.

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