A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

1 February 1992

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters

Vol. 2 (2) , 61-62
https://doi.org/10.1109/75.122410

Abstract

47-GHz monolithic microwave integrated circuit (MMIC) power amplifier chips have been developed using 0.35-mm gate-length molecular beam epitaxial (MBE) MESFET technology. The amplifier chips have been assembled with nominal output power of 0.4 W and 15 dB of gain. The saturated output power of this amplifier exceeded 0.5 W. This amplifier has an application as a driver for a monolithic doubler circuit to reliably produce greater than 80 mW of output power at 94 GHz for missile seeker applications.

Keywords

POWER AMPLIFIERS
GALLIUM ARSENIDE
POWER GENERATION
MICROWAVE AMPLIFIERS
MESFET INTEGRATED CIRCUITS
MMICS
MOLECULAR BEAM EPITAXIAL GROWTH
MICROWAVE INTEGRATED CIRCUITS
MONOLITHIC INTEGRATED CIRCUITS
INTEGRATED CIRCUIT TECHNOLOGY

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