The annealing behavior of the g=2.0026 ESR line in a-Si:H
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2) , 157-161
- https://doi.org/10.1016/0022-3093(84)90315-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977
- Carbon EPR signal from vacuum heated surfacesSurface Science, 1971