Paramagnetic Ion-Doped Nanocrystal as a Voltage-Controlled Spin Filter
- 29 October 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 87 (20) , 206601
- https://doi.org/10.1103/physrevlett.87.206601
Abstract
A theory of spin injection from a ferromagnetic source into a semiconductor through a paramagnetic ion-doped nanocrystal is developed. Spin-polarized current from the source polarizes the ion; the polarized ion, in turn, controls the spin polarization of the current flowing through the nanocrystal. Depending on voltage, the ion can either enhance the injection coefficient by several times or suppress it. Large ion spins produce stronger enhancement of spin injection.Keywords
This publication has 51 references indexed in Scilit:
- Spatially Resolved Spin-Injection Probability for Gallium ArsenideScience, 2001
- Two-Component Interference Effect: Model of a Spin-Polarized TransportPhysical Review Letters, 2001
- T-shaped ballistic spin filterApplied Physics Letters, 2001
- Ideal spin filters: A theoretical study of electron transmission through ordered and disordered interfaces between ferromagnetic metals and semiconductorsPhysical Review B, 2001
- Electrical spin injection across air-exposed epitaxially regrown semiconductor interfacesApplied Physics Letters, 2000
- Robust electrical spin injection into a semiconductor heterostructurePhysical Review B, 2000
- Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductorPhysical Review B, 2000
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996
- Tunneling Potential Barrier Dependence of Electron Spin PolarizationPhysical Review Letters, 1995
- Theory of single-electron charging of quantum wells and dotsPhysical Review B, 1991