Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl2
- 1 December 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L1414-L1415
- https://doi.org/10.1143/jjap.42.l1414
Abstract
We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl2 gasses at a low process temperature of 90°C. We measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. We consider that HI/Cl2-ICP etching is useful in InP-based device fabrication with a resist mask.Keywords
This publication has 0 references indexed in Scilit: