Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C
- 15 February 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (4) , 117-118
- https://doi.org/10.1049/el:19790086
Abstract
We report the temperature dependence, between 20° and 200°C, of free carrier impact ionisation rates in GaAs along the , and directions for the electric field range 4-5 × 105 V/cm. These results should be of interest for the design of avalanche devices such as Impatt diodes which have high operating temperatures.Keywords
This publication has 1 reference indexed in Scilit:
- Hot electron dynamics in GaAs avalanche devices: Competition between ballistic behavior and intervalley scatteringSolid-State Electronics, 1979