Novel process for emitter-base-collector self-aligned heterojunction bipolar transistor using a pattern-inversion method

21 May 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (11) , 562-564
https://doi.org/10.1049/el:19870403

Abstract

A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 × 10μm² realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

Keywords

10 MICRON
CURRENT GAIN
BASE-EMITTER-COLLECTOR SELF-ALIGNED HBTS
1.5 MICRON
HETEROJUNCTION BIPOLAR TRANSISTOR
PROCESS
DRY-ETCHING METHOD
PATTERN-INVERSION METHOD

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