0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs

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Abstract
Pt Schottky barrier diodes (SBDs) with a high Schottky barrier height of 0.86 eV and an ideality factor of near unity were successfully realized by a novel in situ electrochemical process. Applying this novel technique to InP metal semiconductor field effect transistors (MESFETs), good gate control of drain current with pinch-off, an effective channel mobility of 1,840 cm2V-1s-1 and no drain current drift behavior were achieved. The InP MESFET operates even under a positive gate bias, showing feasibility of enhancement-mode operation as well as depletion-mode operation.

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