Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode

5 July 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (14) , 596-598
https://doi.org/10.1049/el:19840411

Abstract

We report the first single-photon counting experiments in a III–V APD. High quantum efficiency, ν=12%, near-room-temperature operation, T=−20°C, has been achieved at long wavelengths λ=1.3 μm.

Keywords

III-V APD
INGAAS AVALANCHE PHOTODIODE
TEMPERATURE -20°C
WAVELENGTH 1.3 MICRON
SINGLE PHOTON COUNTING
III-V SEMICONDUCTORS
QUANTUM EFFICIENCY
LONG WAVELENGTHS
NEAR-ROOM-TEMPERATURE OPERATION

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