Boron delta doping in Si and SiGe and its application toward field-effect transistor devices
- 1 March 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (2) , 1203-1206
- https://doi.org/10.1116/1.587044
Abstract
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