Negative differential resistances in ferromagnetic semiconductor CdCr2Se4 single crystals
- 16 February 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 75 (2) , 433-439
- https://doi.org/10.1002/pssa.2210750212
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electrical Properties of CdCr2Se4. II. n-Type In-Doped Single CrystalsJapanese Journal of Applied Physics, 1980
- Electrical Properties of CdCr2Se4. I. p-Type Ag-Doped Single CrystalsJapanese Journal of Applied Physics, 1980
- Negative resistances in n-type CdCr2Se4 single crystalsApplied Physics Letters, 1977
- Threshold and Memory Switching in Single Crystals of the Magnetic Semiconductor CdCr2Se4Physica Status Solidi (a), 1977
- A Monte Carlo study of the gunn effect behaviour of a ferromagnetic semiconductorPhysica Status Solidi (a), 1976
- Electrical Conductivity ofp-Type CdCr2Se4Single CrystalsJapanese Journal of Applied Physics, 1976
- Transport properties of a non-degenerate ferromagnetic semiconductor in high electric fields. III. Low temperature regionPhysica Status Solidi (a), 1972
- Magnetic semiconductorsIEEE Transactions on Magnetics, 1969
- Semiconducting Properties of Ferromagnetic CdPhysical Review B, 1967
- Electrical Transport Properties of the Insulating Ferromagnetic Spinels CdCr2S4 and CdCr2Se4Journal of Applied Physics, 1966