Density of states in amorphous silicon determined from transport experiments
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 375-380
- https://doi.org/10.1016/0022-3093(80)90623-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Transport properties of doped amorphous siliconSolid State Communications, 1979
- Transport in lithium-doped amorphous siliconfPhilosophical Magazine Part B, 1979
- Conductivity, thermopower, and statistical shift in amorphous semiconductorsPhysical Review B, 1979
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Electrical conductivity and thermoelectric power of substitutionally doped amorphous siliconPhilosophical Magazine, 1977
- An amorphous silicon thin film transistor: Theory and experimentSolid-State Electronics, 1976
- Hopping conduction in amorphous semiconductorsSolid State Communications, 1974
- The Temperature Dependence of the Absorption Edge in Some Amorphous SemiconductorsPhysica Status Solidi (b), 1972
- Random phase model of amorphous semiconductors I. Transport and optical propertiesJournal of Non-Crystalline Solids, 1970
- A measurement of the energy fraction transferred to neutral pions in interactions of about 200 GeVCanadian Journal of Physics, 1968