A thin film, counterion, variable transmittance electrochromic device is described with the structure: . The structure is prepared by sequential deposition of the layers using a combination of sputtering and evaporation processes. The “counterelectrode” has a Li capacity of ∼0.5 mC/cm2 nm and exhibits weak anodic coloration with a luminous efficiency of 3 to 4 cm2/C. Variable transmittance devices, with an area of 20 cm2, have been fabricated using 40 to 80 nm thick films and cathodically coloring a‐ . The luminous transmittance range and switching speed of as‐fabricated devices are typically 10 to 70% and 30 s, respectively. Multicycle switching reveals a decrease in switching speed over the first 5000 cycles while the luminous transmittance range is unchanged.