Quantum Hall effect at a four-terminal junction
- 10 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (15) , 1780-1783
- https://doi.org/10.1103/physrevlett.62.1780
Abstract
A quantum-mechanical calculation is made of charged-particle motion at a four-terminal junction of narrow wires in the presence of a magnetic field of arbitrary strength. The scattering probabilities strongly reflect the influence of quantum effects of the junction, including subband thresholds and virtual resonant states. The Hall resistance calculated from them may depart considerably from the classic wide-wire result. Physical features are related to the emergence of pinned Landau levels as the field strength increases.Keywords
This publication has 10 references indexed in Scilit:
- Quantum bound states in a classically unbound system of crossed wiresPhysical Review B, 1989
- Quantum interference effects in high-mobility mesoscopic GaAs/AlxGa1−x as heterostructuresSurface Science, 1988
- Negative resistance fluctuations at resistance minima in narrow quantum hall conductorsPhysical Review B, 1988
- Absence of backscattering in the quantum Hall effect in multiprobe conductorsPhysical Review B, 1988
- Vanishing hall voltage in a quasi-one-dimensionalheterojunctionPhysical Review B, 1988
- Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1−xAs heterostructure devicesSolid State Communications, 1988
- Quantum Hall Resistance in the Quasi-One-Dimensional Electron GasPhysical Review Letters, 1988
- Quenching of the Hall Effect in a One-Dimensional WirePhysical Review Letters, 1987
- Quantum transport in an electron-wave guidePhysical Review Letters, 1987
- Four-Terminal Phase-Coherent ConductancePhysical Review Letters, 1986