Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
- 1 April 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (4S) , 2801-2803
- https://doi.org/10.1143/jjap.40.2801
Abstract
The memory operation of a self-assembled InAs quantum dot heterostructure field effect transistor (FET) is presented. The amount of trapped electrons in the quantum dots determines the gate-source capacitance and the drain current at a gate bias. In capacitance–voltage (C–V) measurement at low frequency, the quantum dots respond to the signal and a difference of capacitance was observed. These results imply that the memory operation is due to the charge trapping effect of InAs quantum dots.Keywords
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