Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors

This publication has 9 references indexed in Scilit:

• High performance 0.25 µm p -type Ge/SiGeMODFETs
  Electronics Letters, 1998
• Design and fabrication of Si/SiGe n-type MODFETs
  Physica E: Low-dimensional Systems and Nanostructures, 1998
• In situ relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
• Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors
  Thin Solid Films, 1998
• Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si
  Applied Physics Letters, 1997
• Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/
  IEEE Electron Device Letters, 1997
• High f _max n -type Si/SiGeMODFETs
  Electronics Letters, 1997
• DC and RF performance of 0.25 μm p-type SiGe MODFET
  IEEE Electron Device Letters, 1996
• Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001)
  Applied Physics Letters, 1995