Ultrathin oxides using N2O on strained Si1−xGex layers
- 26 February 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (9) , 1262-1264
- https://doi.org/10.1063/1.115946
Abstract
Microwave N2O plasma oxidation of strained Si1−xGex layers at low temperature (<200 °C) is reported. The hole confinement in accumulation in a metal oxide semiconductor (MOS)‐gated SiGe/Si heterostructure has been confirmed by both simulation and experiments. Electrical properties are also discussed.Keywords
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