Improved AlInAs/GaInAs HBTs for high-speed circuits
- 1 August 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 57-68
- https://doi.org/10.1117/12.20907
Abstract
This paper describes the demonstration of CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates. A cutoff frequency (fT) and a maximum frequency of oscillation of 90 GHz and 70 GHz, respectively, have been achieved with a 2x5-.tm2 emitter. The ring oscillators demonstrated a 15.8 ps gate delay. The divider circuits were clocked at 24.8 GHz.Keywords
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