Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

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Abstract
A single crystal of was grown by chemical vapor deposition using an system on a silicon substrate with a sputtered layer. The grown layer of 4 μm thickness was confirmed as a single crystal by examination with reflection electron diffraction and x‐ray diffraction. To reduce the large mismatch between and a silicon substrate, a sputtered layer was employed as a buffer layer. Even though the sputtered layer was polycrystalline, the subsequent layer deposited by CVD was a single crystal. The crystallinity of the deposited layer was strongly affected by the thickness of the sputtered layer, the substrate temperature during sputtering, and the temperature of chemical vapor deposition.

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