In 0.52 (Al 0.9 Ga 0.1 ) 0.48 As/In 0.53 Ga 0.47 AsHEMT withimproved device reliability
- 22 June 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (13) , 1105-1106
- https://doi.org/10.1049/el:19950728
Abstract
A novel In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak gm of 295 mS/mm, an fT of 35 GHz, and an fmax of 76 GHz with a gate length of 0.8 µm. Furthermore, after 36 h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT, which is a better result than obtainable in conventional InP HEMTs.Keywords
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