Diffusion of phosphorus in TaSi2 thin films I: Lattice and grain boundary diffusion in TaSi2/Si(polycrystalline)
- 1 December 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 110 (2) , 115-127
- https://doi.org/10.1016/0040-6090(83)90216-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Phosphorus distribution in TaSi2 films by diffusion from a polycrystalline silicon layerJournal of Applied Physics, 1983
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnectsIEEE Transactions on Electron Devices, 1980
- Special aspects of diffusion in thin filmsThin Solid Films, 1975
- Analysis of Penetration Data from Grain Boundary Diffusion ExperimentsJournal of Applied Physics, 1969
- Grain Boundary Impurity DiffusionPhysica Status Solidi (b), 1966
- Exact Solutions of Two Ideal Cases in Grain Boundary Diffusion Problem and the Application to Sectioning MethodJournal of the Physics Society Japan, 1964
- The analysis of grain boundary diffusion measurementsBritish Journal of Applied Physics, 1963
- Lattice and Grain Boundary Diffusion in PolycrystalsTransactions of the Japan Institute of Metals, 1961
- CXXXVIII. Concentration contours in grain boundary diffusionJournal of Computers in Education, 1954
- Calculation of Diffusion Penetration Curves for Surface and Grain Boundary DiffusionJournal of Applied Physics, 1951