Thickness Dependence of Creep Switching in Magnetic Films
- 1 March 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (3) , 1112-1113
- https://doi.org/10.1063/1.1714123
Abstract
The dependence of creep switching on film thickness has been measured in Permalloy magnetic films 200 to 2000 Å thick. No creep was observed in films thinner than 400 Å. With a 1‐Oe (0.6 Hw) dc easy‐axis field present, the transverse threshold field for many‐pulse disturbing decreases an order of magnitude between 400 and 600 Å. Between 600 and 2000 Å, this creep threshold remains essentially constant. The practical significance in limiting the word line density in magnetic film memories and providing a writing mode for NDRO or band‐switched memories are discussed.This publication has 7 references indexed in Scilit:
- Magnetization Curling in Tapered Edge FilmsJournal of Applied Physics, 1964
- Origin of Domain-Wall Creeping in Magnetic FilmsJournal of Applied Physics, 1964
- NDRO Magnetic Film Memory Mode Using Creep and Boundary Displacement SwitchingJournal of Applied Physics, 1964
- Future Developments in Large Magnetic Film MemoriesJournal of Applied Physics, 1964
- A New Explanation of Domain Wall Creep in Thin Magnetic FilmsNature, 1963
- Domain Walls in Thin Ni–Fe FilmsJournal of Applied Physics, 1963
- Partial-Switching Processes in Thin Magnetic Films [Letter to the Editor]IBM Journal of Research and Development, 1962