Time-domain method of measuring transistor parameters
- 1 August 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 6 (4) , 223-226
- https://doi.org/10.1109/jssc.1971.1050171
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Comparison of large signal models for junction transistorsProceedings of the IEEE, 1964
- Effect of nonlinear collector capacitance on collector current rise timeIRE Transactions on Electron Devices, 1956