Multisection electroabsorption modulators integratedwith distributedfeedback lasers for pulse generation coded at 10 Gbit/s
- 7 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (14) , 1144-1145
- https://doi.org/10.1049/el:19940783
Abstract
The monolithic integration of a multisection electroabsorption modulator and a distributed feedback laser using strained-InGaAsP multiquantum wells is described. Short pulses less than 17 ps are generated and a coded pulse train at 10 Gbit/s is obtained using the monolithic two-section modulator.Keywords
This publication has 6 references indexed in Scilit:
- Transform-limited 7-ps optical pulse generation using a sinusoidally driven InGaAsP/InGaAsP strained multiple-quantum-well DFB laser/modulator monolithically integrated light sourceIEEE Photonics Technology Letters, 1993
- Strained-InGaAsP MQW electroabsorption modulator integrated DFB laserElectronics Letters, 1993
- Optical short pulse generation and data modulation by a single-chip InGaAsP tandem-integrated electroabsorption modulator (TEAM)Electronics Letters, 1993
- Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAIAs multiquantum well modulatorElectronics Letters, 1993
- 4.5 Gbit/s modelocked extended-cavity laser with a monolithically integrated electroabsorption modulatorElectronics Letters, 1993
- Transform-limited 14ps optical pulse generation with 15GHz repetition rate by InGaAsP electroabsorption modulatorElectronics Letters, 1992