High Resolution Electron Microscopy of Grain Boundaries in Silicon
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The lattice imaging technique has been used to study grain boundaries in annealed, chemically vapor deposited (CVD) silicon. The majority of the grain boundaries are Σ*=3, 9 or 27, i.e. they are all twin related, and have boundary planes which coincide with high density planes of the appropriate coincidence site lattice (CSL). Asymmetric Σ=27 boundaries are found to be dissociated on an atomic scale into faceted Σ=3 boundaries and Σ=9 boundaries. No dissociation of the Σ=27 boundaries is observed when the boundary planes are symmetric.Keywords
This publication has 9 references indexed in Scilit:
- Observation of [110) tilt boundary structures in gold by high resolution HVEMPhilosophical Magazine A, 1981
- Atomistic faceting of assymetric tilt boundariesScripta Metallurgica, 1981
- The low-angle [011] tilt boundary in germanium I. High-resolution structure determinationPhilosophical Magazine A, 1979
- Low energy planes for tilt grain boundaries in goldActa Metallurgica, 1978
- Periodic grain boundary structures in aluminium I. A combined experimental and theoretical investigation of coincidence grain boundary structure in aluminiumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- Lattice imaging of a grain boundary in crystalline germaniumPhilosophical Magazine, 1977
- Annealing twin interfaces in an austenitic stainless steelPhilosophical Magazine, 1970
- Quantitative observation of misfit dislocation arrays in low and high angle twist grain boundariesPhilosophical Magazine, 1970
- Models of grain boundaries in the diamond lattice I. Tilt about I 10Physica, 1959