Extraction of implantation profiles from the differential body effect of ion-implanted m.o.s. transistors
- 13 May 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (10) , 257-258
- https://doi.org/10.1049/el:19760198
Abstract
A simple d.c. method is presented for the extraction of very shallow doping profiles in the depth range 0–200 nm in buried-channel transistors or c.c.d.s. The evaluation is free from complex corrections. Profile position and concentrations are determined with ± 5% accuracy.Keywords
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