An optronic negative resistance circuit
- 1 April 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 9 (2) , 79-81
- https://doi.org/10.1109/JSSC.1974.1050467
Abstract
A negative-resistance circuit has been constructed with the combination of a p-n-p junction transistor, a light emitting p-n diode and a n-p-n photo transistor. The circuit provides negative-resistance voltage-current characteristics in both for increasing and decreasing the positively applied voltage, and holds a facility to obtain external control optically. The breakover voltage can be set at a desired value according to the adjustment of bias resistances for the p-n-p junction transistor.Keywords
This publication has 2 references indexed in Scilit:
- An optronic negative resistance circuitIEEE Journal of Solid-State Circuits, 1974
- Generalized turn-on criterion of p-n-p-n devicesIEEE Transactions on Electron Devices, 1967