Stress-induced layer-by-layer growth of Ge on Si(100)
- 15 April 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (11) , 9377-9380
- https://doi.org/10.1103/physrevb.43.9377
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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