A Simplified Graphical Evaluation of High-Frequency and Quasistatic Capacitance-Voltage Curves

1 December 1972

journal article
research article
Published by AIP Publishing in Review of Scientific Instruments

Vol. 43 (12) , 1775-1777
https://doi.org/10.1063/1.1685562

Abstract

High‐frequency and quasistatic capacitance‐voltage curves of metal silicon‐dioxide siliconcapacitors can be evaluated quickly by the use of only two graphs to give doping density, flat band voltage, and density of interface states at selected points in the band gap.

Keywords

This publication has 4 references indexed in Scilit:

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
Surface Science, 1971
Surface states at steam-grown silicon-silicon dioxide interfaces
IEEE Transactions on Electron Devices, 1966
Ideal MOS Curves for Silicon
Bell System Technical Journal, 1966
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
Solid-State Electronics, 1965