A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET's

1 May 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (5) , 606-607
https://doi.org/10.1109/t-ed.1981.20395

Abstract

Analytical modeling of ion implanted short channel MOSFET's is demonstrated. A dynamic averaging technique is proposed to transform the ion implanted bulk charge distribution into a constant charge and a charge sheet at the Si-SiO2interface, such that the total charge and depletion depth are conserved. This transformation coupled with a two-dimensional gate-source-drain charge-sharing scheme is used to derive an analytical model for ion implanted short channel devices. Experimental data is presented to verify the validity of the model.

Keywords

ION IMPLANTATION
DESIGN AUTOMATION

This publication has 0 references indexed in Scilit: