A 5732-element linear CCD image sensor
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (8) , 1541-1545
- https://doi.org/10.1109/t-ed.1985.22161
Abstract
This paper describes a high-density CCD image sensor with 5732 elements in 1.2-in-long silicon chip with a 5-µm effective sampling pitch. The device architecture includes a bilinear sensor array of odd and even staggered apertures, an integrated delay stage to multiplex the odd and even pixel data, and a unique self-aligned aperture structure. This design is fabricated in a standard two-layer polysilicon-gate BCCD process with relaxed 3.0-µm design rules, Typical device characteristics achieved are a charge-transfer efficiency of 0.99995, a sensor nonuniformity of ±4 percent peak to peak, an MTF of 0.625 at 50 c/mm, and an operating speed of 24 MHz.Keywords
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