Direct observation of monoatomic step behaviour in MBE on Si by reflection electron microscopy
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 393-397
- https://doi.org/10.1016/0022-0248(91)90774-y
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopyPhysica Status Solidi (a), 1989
- Transformations on clean Si(111) stepped surface during sublimationSurface Science, 1989