Photo-Hall effect measurements in irradiated diamond

Abstract
Measurements of the photocurrent and the Hall current in electron-irradiated type IIb diamond have been made at 290 and 4.2K. The free carriers were stimulated by an argon-ion laser. Measurements were carried out with magnetic field up to 4 T. At low light intensities the Hall mobilities for positive holes excited by light of wavelength 514.5 nm (2.410 eV) and 488.0 nm (2.541 eV) were found to be 0.137 T-1 at 290K and 0.59 T-1 at 4.2K. Similar experiments were carried out with a dye laser. Over the range 432 nm (2.87 eV) to 428 nm (2.90 eV) the majority photocarriers are positive holes. It is concluded that optical excitation of the GR defect using resonance radiation at 430.4 nm (GR2, 2.881 eV) and 429.4 nm (GR3, 2.88 eV) corresponds to excitation of a positive hole at the neutral vacant atomic site in diamond.

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