Deep-levels in stoichiometry-varied Cu(In,Ga)(S,Se)2 solar cells
- 17 April 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 431-432, 163-166
- https://doi.org/10.1016/s0040-6090(03)00228-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electrical characterization of ZnO/CdS/Cu(In,Ga)Se2 devices with controlled sodium contentThin Solid Films, 2001
- Rapid CIS-process for high efficiency PV-modules: development towards large area processingThin Solid Films, 2001
- Improved Laplace transform method to determine trap densities from transients: application to ZnO and filmsSemiconductor Science and Technology, 1998
- Impact of Na and S incorporation on the electronic transport mechanisms of Cu(In, Ga)Se2 solar cellsSolid State Communications, 1998
- Defect physics of thechalcopyrite semiconductorPhysical Review B, 1998
- Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopyJournal of Applied Physics, 1998
- The metastable changes of the trap spectra of CuInSe2-based photovoltaic devicesJournal of Applied Physics, 1996
- Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctionsJournal of Applied Physics, 1996
- ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceApplied Physics Letters, 1993
- Characterization of the defect levels in copper indium diselenideSolar Cells, 1991