A high-performance gate/base drive using a current source
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industry Applications
- Vol. 29 (5) , 933-939
- https://doi.org/10.1109/28.245717
Abstract
The gate drive discussed achieves extremely fast turn-on times due to a current pulse applied to the gate. The gate/base current rise time is only a function of the turn-off time of a MOSFET, resulting in extremely fast rise times. The fundamental limits of the new drive are pointed out, including minimum off-time and maximum on-time. A loss analysis is also carried out. Experimental results verify the performance of the gate drive.Keywords
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