Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz

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Abstract
A direct wide-gap semiconductor LiZnP has been prepared by rapid evaporation onto a quartz substrate. Various characterization techniques such as x-ray analysis, Rutherford backscattering analysis, and scanning electron microscopy were used to evaluate the quality of the films. Single-phase films were obtained by annealing during 40 min at substrate temperatures ranging from 400 to 440 °C. The grains in the films were oriented preferentially to the 〈111〉 direction with increasing substrate temperature. The optical transmission of the LiZnP films was observed to the short wavelength beyond an absorption edge (∼600 nm) of bulk materials. This suggests the existence of the imperfection such as accumulated impurities at grain boundaries.