Electrical Activation and Deep Diffusion of Ion-Implanted Al and Ga in Si
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S1)
- https://doi.org/10.7567/jjaps.22s1.153
Abstract
The effects of lowering the electrical activity in Al and Ga implanted Si are investigated mainly from the view points of residual defects and diffusion properties after annealing implanted layers. Both implantation and annealing processes to obtain high electrical activity and deep diffused layers after annealing at temperatures above 1000°C are described.Keywords
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